Graduate Research Assistant: Princeton University
Expertise in organic thin film, solar cell, and LED fabrication, characterization, and exciton and charge transport physics. Investigated the effect of charge transfer state energetic distribution on photocarrier generation/recombination and non-radiative energy loss of organic solar cells.
Measurement Experience: Quantum Efficiency (QE) (with electric and magnetic field, light intensity, and temperature variations), Photoluminescence (PL), Electroluminescence (EL), Film Absorbance, Electroabsorption (EA), Charge Modulation Spectroscopy (CMS), Current-Voltage Characterization (with light intensity and temperature variations), Photothermal Deflection Spectroscopy (PDS).
Scientific Tools Experience:
- Material Purification: Thermal Gradient Sublimation
- Deposition: Thermal Evaporator (Angstrom), Spin Coater, ALD
- Imaging Tools: Optical Microscope, AFM, SEM, TEM
- Spectroscopy: UV-Vis, PL Spectrometer, FTIR, Raman, Ellipsometer, XPS, XRD
- Electrical Characterization: Solar Simulator, Parameter Analyzer, Lock-in-amplifier
- Low Temperature: Liquid N2 Cryostat
- Simulation and Data Analysis: MATLAB, Mathematica, Python, Origin
- Hardware Interfacing and 3D Prototyping: LabVIEW, Autodesk
Measurement Setup/Tool Development:
Designed and built the following tools/setups for Rand Lab-
● Temperature-dependent QE, EL and IV measurements ● EA ● CMS ● PDS (ongoing)
Research Assistant: Bangladesh University of Engineering & Technology
Expertise in numerical simulation and analytical transport modeling of monolayer transition-metal dichalcogenide (TMD) channel MOSFETs
Simulation Tools Development:
- 1-D self-consistent Schrödinger-Poisson Electrostatics solver
- Non-Equilibrium Green's Functions formalism-based quantum transport solver
Simulation Platform: MATLAB, COMSOL Multiphysics
Undergrad. Research Assistant: Bangladesh University of Engineering & Technology
Expertise in modeling and simulation of III-V High-k Gate-All-Around Nanowire channel MOSFETs, Carbon Nanotube FET and MOS-HEMT. Investigated electrostatics, ballistic transport, interface traps, leakage current, threshold voltage and speed characteristics with physical and material parameter variations.
Simulation Tools Development:
2-D self-consistent Schrödinger-Poisson Electrostatics solver
Simulation Platform: MATLAB, COMSOL Multiphysics, Silvaco-ATLAS, NanoTCAD ViDES, nanoMOS, nextnano