Publications

Complete list of my publications, along with citations could be found in my Google Scholar page: bit.ly/suzkhan

Refereed Journal Publications

1. Saeed Uz Zaman Khan et al., “Quantifying the Effect of Energetic Disorder on Organic Solar Cell Energy Loss”, Joule, vol. 6(12), 2821-2834 (2022). 

2. H. Min, J. Hu, Z. Xu, T. Liu, Saeed Uz Zaman Khan et al., “Hot-casting assisted liquid additive engineering for efficient and stable perovskite solar cells”, Adv. Mater., vol. 34(36) 2205309 (2022).

3. Saeed Uz Zaman Khan et al., “Nonradiative Recombination via Charge-Transfer-Exciton to Polaron Energy Transfer Limits Photocurrent in Organic Solar Cells”, Adv. Energy Mater., 202200551 (2022).

4. Saeed Uz Zaman Khan et al., “Influence of disorder and state filling on charge-transfer-state absorption and emission spectra”, Phys. Rev. Applied, vol. 16, 044026 (2021).

5. C.A. DelPo, Saeed Uz Zaman Khan et al. “Polariton decay in donor-acceptor cavity systems”, J. Phys. Chem. Lett., vol. 12(40), 9774–9782 (2021).

6. K.N. Schwarz, V.D. Mitchell, Saeed Uz Zaman Khan et al. “Morphological Requirements for Nanoscale Electric Field Buildup in a Bulk Heterojunction Solar Cell”, J. Phys. Chem. Lett., vol. 12(1), 537-545 (2020).

7. G. Londi, Saeed Uz Zaman Khan, et al. “Fate of Low-Lying Charge-Transfer Excited States in a Donor: Acceptor Blend with a Large Energy Offset”, J. Phys. Chem. Lett., vol. 11(23), 10219-10226 (2020).

8. C.A. DelPo, B. Kudisch, K.H. Park, Saeed Uz Zaman Khan, et al. “Polariton Transitions in Femtosecond Transient Absorption Studies of Ultrastrong Light–Molecule Coupling”, J. Phys. Chem. Lett., vol. 11(7), 2667-2674 (2020).

9. K.N. Schwarz, P. Geraghty, V.D. Mitchell, Saeed Uz Zaman Khan, et al. “Reduced Recombination and Capacitor-like Charge Buildup in an Organic Heterojunction”, J. Am. Chem. Soc., vol. 142(5) 2562-2571 (2020).

10. Saeed Uz Zaman Khan et al., “Multiple Charge Transfer States in Donor–Acceptor Heterojunctions with Large Frontier Orbital Energy Offsets”, Chem. Mater., vol. 31(17) 6808-6817 (2019).

11. L. Zhao, K.M. Lee, K. Roh, Saeed Uz Zaman Khan et al., “Improved Outcoupling Efficiency and Stability of Perovskite Light‐Emitting Diodes using Thin Emitting Layers”, Adv. Mater., vol. 31(2), 1805836 (2019).

12. E. Rahman, A. Shadman, I. Ahmed, Saeed Uz Zaman Khan et al., “A physically based compact I–V model for monolayer TMDC channel MOSFET and DMFET biosensor”, Nanotechnology, vol. 29(23), 235203 (2018).

13. Q.D.M. Khosru, Saeed Uz Zaman Khan et al., “Study of Electrostatics and Transport Properties of Multigate Graded Nanowire Channel MOSFETs”, ECS Transactions, vol. 72(4) 325-333 (2016).

14. Saeed Uz Zaman Khan and Q.D.M. Khosru, “Quantum Mechanical Electrostatics and Transport Simulation and Performance Evaluation of Short Channel Monolayer WSe2 Field Effect Transistor”, ECS Transactions, vol. 66(14), 11-18 (2015).

15. Saeed Uz Zaman Khan et al., “Impact of High-κ Gate Dielectric and Other Physical Parameters on the Electrostatics and Threshold Voltage of Gate-All-Around Nanowire Transistor”, Int. Journal of Numerical Modeling: Electronic Networks, Devices and Fields (IJNM), vol. 28(4), 389-403 (2014).

16. Q.D.M. Khosru, Saeed Uz Zaman Khan et al., “Capacitance-Voltage Characteristics of Gate-All-Around InxGa1-xAs Nanowire Transistor”, ECS Transactions, vol. 53(1), 169-176 (2013).

17. M.S. Hossain, Saeed Uz Zaman Khan et al., “Size Dependent Transport of Surrounding Gate Carbon Nanotube Field Effect Transistor”, ECS Journal of Solid State Science and Technology, vol. 2(9), M23-M27 (2013).

18. M.S. Hossain, Saeed Uz Zaman Khan et al., “Effect of Gate Dielectric on Ballistic Transport of Cylindrical Carbon Nanotube MOSFET”, ECS Transactions, vol. 53(1), 139-146 (2013). 

Publications in Conference Proceedings

1. Saeed Uz Zaman Khan et al., “Uncoupled Mode Space Approach Towards Transport Modeling of Gate-all-around InxGa1-xAs Nanowire MOSFET”, 8th Int. Conf. on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, Dec. (2014).

2. Saeed Uz Zaman Khan et al., “Analytical Modeling of Gate Capacitance and Drain Current of Gate-all-around InxGa1-xAs Nanowire MOSFET”, 2nd  Int. Conf. on Electronic Design (ICED), Penang, Malaysia, Aug. (2014).

3. M.S. Hossain, Saeed Uz Zaman Khan et al., “Effect of temperature on ballistic transport of cylindrical (10,0) CNTFET”, IEEE Int. Conf. on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, Jun. (2013).

4. Saeed Uz Zaman Khan et al., “Carrier Transport Phenomena in Cylindrical Channel III-V Gate-All-Around Nanowire Transistor”, Int. Semiconductor Device Research Symposium (ISDRS), Maryland, USA, Dec. (2013).

5. M. S. Hossain, Saeed Uz Zaman Khan et al., “Analytical Modeling of Potential Profile and Threshold Voltage for Rectangular Gate-all-around III-V Nanowire MOSFETs with ATLAS Verification”, IEEE Int. Conf. on Electron Devices and Solid-State Circuits (EDSSC), Bangkok, Thailand, Dec (2012).

6. R. Zaman, Saeed Uz Zaman Khan et al., “Self-Consistent Determination of Threshold Voltage of In-rich Gate-all-around InxGa1-xAs Nanowire Transistor Incorporating Quantum Mechanical Effect”, 7th Int. Conf. on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, Dec. (2012).

7. F.U. Rahman, M.S. Hossain, Saeed Uz Zaman Khan et al., “Characterization of Interface Trap Density of In-rich InGaAs Gate-all-around Nanowire MOSFETs”, 7th Int. Conf. on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, Dec. (2012).

8. M.O. Hossen, M.S. Hossain, Saeed Uz Zaman Khan et al., “Ballistic Performance limit and Gate Leakage Modeling of Rectangular Gate-all-around InGaAs Nanowire Transistors with ALD Al2O3 as Gate Dielectric”, IEEE Int. Conf. on Electron Devices and Solid-State Circuits (EDSSC), Bangkok, Thailand, Dec. (2012).